Title
Measurement of Stress in III-V Semiconductors using the Degree of Polarization of Luminescence
Date of Award
10-1992
Degree Type
Thesis
Degree Name
Doctor of Philosophy (PhD)
Department
Engineering Physics
Supervisor
D.T. Cassidy
Abstract
The techniques of polarization-resolved electroluminescence and photoluminescence have been demonstrated to be accurate methods of measuring mechanical stress in luminescent semiconductors. These techniques have been applied to measure the stresses in AlGaAs/GaAs and InGaAsP/InP superluminescent diodes and diode lasers and bulk GaAs and InP crystals. Stresses due to various diode laser manufacturing processes have been measured. Individual dislocations in bulk crystals and strained epitaxial layers have been detected and characterized by their stress patterns.
Recommended Citation
Colbourne, Paul Dwight, "Measurement of Stress in III-V Semiconductors using the Degree of Polarization of Luminescence" (1992). Open Access Dissertations and Theses. Paper 2092.
http://digitalcommons.mcmaster.ca/opendissertations/2092