Date of Award

4-1993

Degree Type

Thesis

Degree Name

Doctor of Philosophy (PhD)

Department

Engineering Physics

Supervisor

D.T. Cassidy

Abstract

Physical mechanisms responsible for the above-threshold spectral output of 1.3 μm InGaAsP semiconductor diode lasers are presented and discussed. Measurements
of the facet emission of a large number of devices indicate modulations in the below-threshold
RmGm product which can be used to predict and explain the shape of the above-threshold mode profile for output power levels of less than approximately 5 mW. Above-threshold
measurements using devices incorporated into a shon-external-cavity
configuration show that a symmetric, nonlinear gain mechanism is required to explain the
spectral properties for output power levels in a single mode which are greater that 5 mW. Thus it is concluded that both the effects of scattering centres and nonlinear gain are required to model accurately the spectral output of 1.3 μm InGaAsP semiconductor diode lasers.


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