Date of Award
Doctor of Philosophy (PhD)
Physical mechanisms responsible for the above-threshold spectral output of 1.3 μm InGaAsP semiconductor diode lasers are presented and discussed. Measurements
of the facet emission of a large number of devices indicate modulations in the below-threshold
RmGm product which can be used to predict and explain the shape of the above-threshold mode profile for output power levels of less than approximately 5 mW. Above-threshold
measurements using devices incorporated into a shon-external-cavity
configuration show that a symmetric, nonlinear gain mechanism is required to explain the
spectral properties for output power levels in a single mode which are greater that 5 mW. Thus it is concluded that both the effects of scattering centres and nonlinear gain are required to model accurately the spectral output of 1.3 μm InGaAsP semiconductor diode lasers.
Hayward, Joseph Edward, "Spectral Properties of 1.3 μm InGaAsP Semiconductor Diode Lasers" (1993). Open Access Dissertations and Theses. Paper 3948.