Date of Award
Master of Applied Science (MASc)
A. P. Knights
Y. Haddara and Dr. L. Soleymani
Since the first description of Si nanocrystals, research in this field has gone through raid progress and potential applications of Si nanocrystals have been established. There are several methods applicable to the fabrication of Si nanocrystals with one of the most used being ion implantation followed by thermal annealing. Two types of thermal annealing are available for use: furnace annealing (FA) for several hours, normally in an N2 atmosphere; and rapid thermal annealing (RTA) for a short time (less than a few minutes), again in an inert atmosphere such as N2. The formation of the nanocrystals then proceeds with decomposition, segregation, diffusion, nucleation, aggregation, growth and crystallization. This formation requires temperatures in excess of 1000o C such that noticeable photoluminescence may be observed. This thesis explores the fabrication of Si nanocrystals using the McMaster ion implanter and subsequent RTA. The implantation conditions required to form luminescent nanocrystals are determined. For example, for an implantation energy of 10 KeV a minimum dose of 1.5 1016 ions cm-2 is required. The relationship between luminescent intensity and post-implantation annealing is also explored. An optimum annealing temperature of 1100oC is found. For the first time to the author’s knowledge, a study of the effects of thin film thickness on luminescent intensity is conducted. The major conclusions of this thesis are i) a specific thickness of oxide layer has the maximum PL for a fixed implantation energy and implantation dose, ii) PL intensity is inversely proportional with measuring temperature., iii) the type of oxidation process has a large effect on PL intensity.
IBNA SHAIKH, MD ASKER MR, "FORMATION OF SILICON NANOCRYSTALS IN SiO2 BY SILICON IMPLANTATION AND SUBSEQUENT ANNEALING" (2012). Open Access Dissertations and Theses. Paper 7565.
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